smd type transistors www.kexin.com.cn 1 so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 features high current gain low collector-emitter saturation voltage 1e1 2b1 3c2 4e2 5b2 6c1 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c =10 a, i e =0 50 v collector-emitter breakdown voltage v ceo i c =10ma,i b =0 45 v emitter-base breakdown voltage v ebo i e =10 a, i c =0 6.0 v v cb =30v,i e = 0 15 na v cb =30v,i e =0,t a = 150 5.0 a dc current gain h fe i c =2.0ma,v ce = 5.0 v 110 630 i c =10ma,i b = 0.5 ma 0.25 v i c = 100 ma, i b = 5.0 ma 0.65 v i c =2.0ma,v ce = 5.0 v 0.58 0.7 v i c =10ma,v ce = 5.0 v 0.77 v output capacitance c ob v cb =10v,f=1.0mhz 2.0 pf transistion frequency f t i c =20ma,v ce = 5.0,f = 100 mhz 200 mhz v be(on) base-emitter on voltage i cbo collector-cutoff current v ce(sat) collector-emitter saturation voltage marking marking 1c absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 6.0 v collector current i c 100 ma total device dissipation 300 mw derate above 25 2.4 mw/ thermal resistance, junction to ambient r ja 415 /w operating and storage junction temperature range t j ,t stg -55to+150 p d npn multi-chip general purpose amplifier KC847S (bc847s)
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